[913pcs Hisa]
- Nambari ya Sehemu:
- FQD19N10TM_F080
- Mzalishaji:
- ON Semiconductor
- Maelezo ya kina:
- MOSFET N-CH 100V 15.6A DPAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - Arrays, Thyristors - TRIAC, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Moduli za Dereva za Nguvu and Transistors - Kusudi Maalum ...
- Faida ya Ushindani:
- We specialize in ON Semiconductor FQD19N10TM_F080 electronic components. FQD19N10TM_F080 can be shipped within 24 hours after order. If you have any demands for FQD19N10TM_F080, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQD19N10TM_F080 Sifa za Bidhaa
Nambari ya Sehemu :
FQD19N10TM_F080
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET N-CH 100V 15.6A DPAK
Mfululizo :
QFET®
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
15.6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
100 mOhm @ 7.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±25V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
780pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.5W (Ta), 50W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D-Pak
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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