Diodes Incorporated - DMT3022UEV-7

KEY Part #: K6522193

DMT3022UEV-7 Bei (USD) [325631pcs Hisa]

  • 1 pcs$0.11359

Nambari ya Sehemu:
DMT3022UEV-7
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET BVDSS 25V-30V POWERDI333.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Kufika, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMT3022UEV-7 electronic components. DMT3022UEV-7 can be shipped within 24 hours after order. If you have any demands for DMT3022UEV-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMT3022UEV-7 Sifa za Bidhaa

Nambari ya Sehemu : DMT3022UEV-7
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET BVDSS 25V-30V POWERDI333
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 17A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs : 22 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 1.8V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 13.9nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 903pF @ 15V
Nguvu - Max : 900mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-PowerVDFN
Kifurushi cha Kifaa cha Mtoaji : PowerDI3333-8