Nambari ya Sehemu :
BSM180C12P2E202
Mzalishaji :
Rohm Semiconductor
Maelezo :
BSM180C12P2E202 IS A SIC SILICO
Teknolojia :
SiC (Silicon Carbide Junction Transistor)
Kukata kwa Voltage Voltage (Vdss) :
1200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
204A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
-
Njia ya Kutumia (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
4V @ 35.2mA
Malango ya Lango (Qg) (Max) @ Vgs :
-
Uingizwaji uwezo (Ciss) (Max) @ Vds :
20000pF @ 10V
Kuondoa Nguvu (Max) :
1360W (Tc)
Joto la Kufanya kazi :
175°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi cha Kifaa cha Mtoaji :
Module
Kifurushi / Kesi :
Module