PMXB360ENEAZ Bei (USD) [735924pcs Hisa]
- 1 pcs$0.05026
- 5,000 pcs$0.04383
- Nambari ya Sehemu:
- PMXB360ENEAZ
- Mzalishaji:
- Nexperia USA Inc.
- Maelezo ya kina:
- MOSFET N-CH 80V 1.1A 3DFN.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - RF, Thyristors - TRIAC and Transistors - Bipolar (BJT) - Moja ...
- Faida ya Ushindani:
- We specialize in Nexperia USA Inc. PMXB360ENEAZ electronic components. PMXB360ENEAZ can be shipped within 24 hours after order. If you have any demands for PMXB360ENEAZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMXB360ENEAZ Sifa za Bidhaa
Nambari ya Sehemu :
PMXB360ENEAZ
Mzalishaji :
Nexperia USA Inc.
Maelezo :
MOSFET N-CH 80V 1.1A 3DFN
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
80V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.1A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
450 mOhm @ 1.1A, 10V
Vgs (th) (Max) @ Id :
2.7V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
4.5nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
130pF @ 40V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
400mW (Ta), 6.25W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
DFN1010D-3
Kifurushi / Kesi :
3-XDFN Exposed Pad
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