ITT Cannon, LLC - 120220-0161

KEY Part #: K7359522

120220-0161 Bei (USD) [730635pcs Hisa]

  • 1 pcs$0.05062
  • 6,000 pcs$0.04746
  • 12,000 pcs$0.04271
  • 30,000 pcs$0.04208
  • 60,000 pcs$0.04113

Nambari ya Sehemu:
120220-0161
Mzalishaji:
ITT Cannon, LLC
Maelezo ya kina:
UNIVERSAL CONTACT 2.5MM SMD. Battery Contacts
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: RF Amplifiers, RF Modulators, Usafirishaji wa RFID, Tepe, ICF Mdhibiti Nguvu IC, RFI na EMI - Mawasiliano, Kidole cha vidole na gla, RFID, Upataji wa RF, ICs za Ufuatiliaji, Vipimo vya RF Transceiver and Vituo vya RFID ...
Faida ya Ushindani:
We specialize in ITT Cannon, LLC 120220-0161 electronic components. 120220-0161 can be shipped within 24 hours after order. If you have any demands for 120220-0161, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

120220-0161 Sifa za Bidhaa

Nambari ya Sehemu : 120220-0161
Mzalishaji : ITT Cannon, LLC
Maelezo : UNIVERSAL CONTACT 2.5MM SMD
Mfululizo : -
Hali ya Sehemu : Active
Chapa : Shield Finger, Pre-Loaded
Sura : -
Upana : 0.043" (1.10mm)
Urefu : 0.192" (4.87mm)
Urefu : 0.098" (2.50mm)
Nyenzo : Beryllium Copper
Kupanga : Gold
Kupanga - Unene : 5.906µin (0.15µm)
Njia ya Kiambatisho : Solder
Joto la Kufanya kazi : -

Unaweza pia Kuvutiwa Na
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.