[3047pcs Hisa]
- Nambari ya Sehemu:
- IPS050N03LGBKMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CHANNEL 30V 50A TO251-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - RF, Thyristors - TRIAC, Transistors - JFETs and Transistors - FET, MOSFETs - RF ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPS050N03LGBKMA1 electronic components. IPS050N03LGBKMA1 can be shipped within 24 hours after order. If you have any demands for IPS050N03LGBKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPS050N03LGBKMA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPS050N03LGBKMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CHANNEL 30V 50A TO251-3
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
50A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
5 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
-
Uingizwaji uwezo (Ciss) (Max) @ Vds :
3200pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
68W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
PG-TO251-3
Kifurushi / Kesi :
TO-251-3 Stub Leads, IPak
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