DMN31D6UT-13 Bei (USD) [2007759pcs Hisa]
- 1 pcs$0.01842
- 10,000 pcs$0.01664
- Nambari ya Sehemu:
- DMN31D6UT-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N-CH 30V 350MA SOT523.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Moduli, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Arrays, Thyristors - TRIAC and Viwango - Zener - Moja ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN31D6UT-13 electronic components. DMN31D6UT-13 can be shipped within 24 hours after order. If you have any demands for DMN31D6UT-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN31D6UT-13 Sifa za Bidhaa
Nambari ya Sehemu :
DMN31D6UT-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N-CH 30V 350MA SOT523
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
350mA (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
1.5 Ohm @ 100mA, 4.5V
Vgs (th) (Max) @ Id :
1.4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
0.35nC @ 4.5V
Vgs (Max) :
±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
13.6pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
320mW
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
SOT-523
Kifurushi / Kesi :
SOT-523
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