SIDC30D120H8X1SA4 Bei (USD) [18300pcs Hisa]
- 1 pcs$2.25198
- Nambari ya Sehemu:
- SIDC30D120H8X1SA4
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- DIODE GEN PURP 1.2KV 50A WAFER.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Viwango - Zener - Arrays, Transistors - JFETs, Viwango - Rectifiers - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Rectifiers - Moja, Moduli za Dereva za Nguvu and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies SIDC30D120H8X1SA4 electronic components. SIDC30D120H8X1SA4 can be shipped within 24 hours after order. If you have any demands for SIDC30D120H8X1SA4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIDC30D120H8X1SA4 Sifa za Bidhaa
Nambari ya Sehemu :
SIDC30D120H8X1SA4
Mzalishaji :
Infineon Technologies
Maelezo :
DIODE GEN PURP 1.2KV 50A WAFER
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Diode :
Standard
Voltage - DC Reverse (Vr) (Max) :
1200V
Sasa - Wastani Aliyerekebishwa (Io) :
50A (DC)
Voltage - Mbele (Vf) (Max) @ Kama :
1.97V @ 50A
Kasi :
Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
-
Sasa - Rejea kuvuja @ Vr :
27µA @ 1200V
Uwezo @ Vr, F :
-
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
Die
Kifurushi cha Kifaa cha Mtoaji :
Sawn on foil
Joto la Kufanya kazi - Junction :
-40°C ~ 175°C
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
-
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Vishay Semiconductor Diodes Division
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