Toshiba Semiconductor and Storage - 1SS307(TE85L,F)

KEY Part #: K6431394

1SS307(TE85L,F) Bei (USD) [914187pcs Hisa]

  • 1 pcs$0.04046

Nambari ya Sehemu:
1SS307(TE85L,F)
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
DIODE GEN PURP 30V 100MA SMINI. Diodes - General Purpose, Power, Switching Switching diode, 30V 3 pins, S-Mini 0.1A
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Moja, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Viwango - Bridge Rectifiers ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage 1SS307(TE85L,F) electronic components. 1SS307(TE85L,F) can be shipped within 24 hours after order. If you have any demands for 1SS307(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS307(TE85L,F) Sifa za Bidhaa

Nambari ya Sehemu : 1SS307(TE85L,F)
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : DIODE GEN PURP 30V 100MA SMINI
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 30V
Sasa - Wastani Aliyerekebishwa (Io) : 100mA
Voltage - Mbele (Vf) (Max) @ Kama : 1.3V @ 100mA
Kasi : Small Signal =< 200mA (Io), Any Speed
Rudisha Wakati wa Kuokoa (trr) : -
Sasa - Rejea kuvuja @ Vr : 10µA @ 30V
Uwezo @ Vr, F : 6pF @ 0V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji : S-Mini
Joto la Kufanya kazi - Junction : 125°C (Max)

Unaweza pia Kuvutiwa Na
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