BSC16DN25NS3GATMA1 Bei (USD) [115180pcs Hisa]
- 1 pcs$0.32113
- Nambari ya Sehemu:
- BSC16DN25NS3GATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 250V 10.9A 8TDSON.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - RF, Viwango - RF, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Thyristors - SCRs - Moduli ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies BSC16DN25NS3GATMA1 electronic components. BSC16DN25NS3GATMA1 can be shipped within 24 hours after order. If you have any demands for BSC16DN25NS3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC16DN25NS3GATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
BSC16DN25NS3GATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 250V 10.9A 8TDSON
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
250V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10.9A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
165 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 32µA
Malango ya Lango (Qg) (Max) @ Vgs :
11.4nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
920pF @ 100V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
62.5W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TDSON-8
Kifurushi / Kesi :
8-PowerTDFN
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