Toshiba Semiconductor and Storage - TJ10S04M3L(T6L1,NQ

KEY Part #: K6420399

TJ10S04M3L(T6L1,NQ Bei (USD) [190859pcs Hisa]

  • 1 pcs$0.21424
  • 2,000 pcs$0.21317

Nambari ya Sehemu:
TJ10S04M3L(T6L1,NQ
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
MOSFET P-CH 40V 10A DPAK-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moduli, Transistors - IGBTs - Moja, Thyristors - DIAC, SIDAC, Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - Arrays and Transistors - Bipolar (BJT) - Moja ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage TJ10S04M3L(T6L1,NQ electronic components. TJ10S04M3L(T6L1,NQ can be shipped within 24 hours after order. If you have any demands for TJ10S04M3L(T6L1,NQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TJ10S04M3L(T6L1,NQ Sifa za Bidhaa

Nambari ya Sehemu : TJ10S04M3L(T6L1,NQ
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : MOSFET P-CH 40V 10A DPAK-3
Mfululizo : U-MOSVI
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 10A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 44 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id : 3V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 19nC @ 10V
Vgs (Max) : +10V, -20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 930pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 27W (Tc)
Joto la Kufanya kazi : 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : DPAK+
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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