Nambari ya Sehemu :
TK5Q60W,S1VQ
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N CH 600V 5.4A IPAK
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
5.4A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
900 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 270µA
Malango ya Lango (Qg) (Max) @ Vgs :
10.5nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
380pF @ 300V
Makala ya FET :
Super Junction
Kuondoa Nguvu (Max) :
60W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
I-PAK
Kifurushi / Kesi :
TO-251-3 Stub Leads, IPak