SQM120P10_10M1LGE3 Bei (USD) [44745pcs Hisa]
- 1 pcs$0.87385
- Nambari ya Sehemu:
- SQM120P10_10M1LGE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET P-CH 100V 120A TO263.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - RF, Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - Arrays, Transistors - FET, MOSFETs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - SCRs - Moduli and Transistors - Ushirikiano uliopangwa ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SQM120P10_10M1LGE3 electronic components. SQM120P10_10M1LGE3 can be shipped within 24 hours after order. If you have any demands for SQM120P10_10M1LGE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQM120P10_10M1LGE3 Sifa za Bidhaa
Nambari ya Sehemu :
SQM120P10_10M1LGE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CH 100V 120A TO263
Mfululizo :
Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
120A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
10.1 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
190nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
9000pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
375W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-263 (D²Pak)
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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