Toshiba Semiconductor and Storage - RN1909(T5L,F,T)

KEY Part #: K6530114

[1939pcs Hisa]


    Nambari ya Sehemu:
    RN1909(T5L,F,T)
    Mzalishaji:
    Toshiba Semiconductor and Storage
    Maelezo ya kina:
    TRANS 2NPN PREBIAS 0.2W US6.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - RF, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Thyristors - DIAC, SIDAC, Viwango - Rectifiers - Moja and Transistors - Ushirikiano uliopangwa ...
    Faida ya Ushindani:
    We specialize in Toshiba Semiconductor and Storage RN1909(T5L,F,T) electronic components. RN1909(T5L,F,T) can be shipped within 24 hours after order. If you have any demands for RN1909(T5L,F,T), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RN1909(T5L,F,T) Sifa za Bidhaa

    Nambari ya Sehemu : RN1909(T5L,F,T)
    Mzalishaji : Toshiba Semiconductor and Storage
    Maelezo : TRANS 2NPN PREBIAS 0.2W US6
    Mfululizo : -
    Hali ya Sehemu : Active
    Aina ya Transistor : 2 NPN - Pre-Biased (Dual)
    Sasa - Mtoza (Ic) (Max) : 100mA
    Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
    Upinzani - Msingi (R1) : 47 kOhms
    Upinzani - Base ya Emitter (R2) : 22 kOhms
    DC Sasa Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
    Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
    Sasa - Ushuru Mtoaji : 100nA (ICBO)
    Mara kwa mara - Mpito : 250MHz
    Nguvu - Max : 200mW
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : 6-TSSOP, SC-88, SOT-363
    Kifurushi cha Kifaa cha Mtoaji : US6

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