Nambari ya Sehemu :
FDM606P
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET P-CH 20V 6.8A MICROFET
Hali ya Sehemu :
Obsolete
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6.8A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.8V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
30 mOhm @ 6.8A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
30nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2200pF @ 10V
Kuondoa Nguvu (Max) :
1.92W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-MLP, MicroFET (3x2)
Kifurushi / Kesi :
8-SMD, Flat Lead Exposed Pad