[12927pcs Hisa]
- Nambari ya Sehemu:
- BSP296E6327
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 100V 1.1A SOT223.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - Arrays, Transistors - FET, MOSFETs - RF, Viwango - Zener - Arrays, Moduli za Dereva za Nguvu and Thyristors - SCRs - Moduli ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies BSP296E6327 electronic components. BSP296E6327 can be shipped within 24 hours after order. If you have any demands for BSP296E6327, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSP296E6327 Sifa za Bidhaa
Nambari ya Sehemu :
BSP296E6327
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 100V 1.1A SOT223
Mfululizo :
SIPMOS®
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.1A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
700 mOhm @ 1.1A, 10V
Vgs (th) (Max) @ Id :
1.8V @ 400µA
Malango ya Lango (Qg) (Max) @ Vgs :
17.2nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
364pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1.79W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-SOT223-4
Kifurushi / Kesi :
TO-261-4, TO-261AA
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