Nambari ya Sehemu :
TPC8115(TE12L,Q,M)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET P-CH 20V 10A SOP8 2-6J1B
Hali ya Sehemu :
Obsolete
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.8V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
10 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 200µA
Malango ya Lango (Qg) (Max) @ Vgs :
115nC @ 5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
9130pF @ 10V
Kuondoa Nguvu (Max) :
1W (Ta)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-SOP (5.5x6.0)
Kifurushi / Kesi :
8-SOIC (0.173", 4.40mm Width)