Nambari ya Sehemu :
RDD022N60TL
Mzalishaji :
Rohm Semiconductor
Maelezo :
MOSFET N-CH 600V CPT
Hali ya Sehemu :
Not For New Designs
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
6.7 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
4.7V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
7nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
175pF @ 25V
Kuondoa Nguvu (Max) :
20W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
CPT3
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63