Microsemi Corporation - JAN1N5417

KEY Part #: K6440350

JAN1N5417 Bei (USD) [6604pcs Hisa]

  • 1 pcs$5.15178
  • 10 pcs$4.63572
  • 25 pcs$4.22349
  • 100 pcs$3.81153
  • 250 pcs$3.50247
  • 500 pcs$3.19343

Nambari ya Sehemu:
JAN1N5417
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
DIODE GEN PURP 200V 3A AXIAL. ESD Suppressors / TVS Diodes D MET 3A FAST 200V
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Arrays, Transistors - Ushirikiano uliopangwa and Transistors - Bipolar (BJT) - Kufika ...
Faida ya Ushindani:
We specialize in Microsemi Corporation JAN1N5417 electronic components. JAN1N5417 can be shipped within 24 hours after order. If you have any demands for JAN1N5417, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N5417 Sifa za Bidhaa

Nambari ya Sehemu : JAN1N5417
Mzalishaji : Microsemi Corporation
Maelezo : DIODE GEN PURP 200V 3A AXIAL
Mfululizo : Military, MIL-PRF-19500/411
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Sasa - Wastani Aliyerekebishwa (Io) : 3A
Voltage - Mbele (Vf) (Max) @ Kama : 1.5V @ 9A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 150ns
Sasa - Rejea kuvuja @ Vr : 1µA @ 200V
Uwezo @ Vr, F : -
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : B, Axial
Kifurushi cha Kifaa cha Mtoaji : -
Joto la Kufanya kazi - Junction : -65°C ~ 175°C

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