Nambari ya Sehemu :
IDB30E120ATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
DIODE GEN PURP 1.2KV 50A TO263-3
Voltage - DC Reverse (Vr) (Max) :
1200V
Sasa - Wastani Aliyerekebishwa (Io) :
50A (DC)
Voltage - Mbele (Vf) (Max) @ Kama :
2.15V @ 30A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
243ns
Sasa - Rejea kuvuja @ Vr :
100µA @ 1200V
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji :
PG-TO263-3
Joto la Kufanya kazi - Junction :
-55°C ~ 150°C