Infineon Technologies - IDB30E120ATMA1

KEY Part #: K6440273

IDB30E120ATMA1 Bei (USD) [69605pcs Hisa]

  • 1 pcs$0.56175
  • 1,000 pcs$0.40580
  • 2,000 pcs$0.37782
  • 5,000 pcs$0.37315

Nambari ya Sehemu:
IDB30E120ATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
DIODE GEN PURP 1.2KV 50A TO263-3. Diodes - General Purpose, Power, Switching FAST SWITCH EMCON DIODE 1200V 30A
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - Moja, Transistors - Ushirikiano uliopangwa, Viwango - Bridge Rectifiers, Viwango - Zener - Arrays, Thyristors - SCR, Thyristors - DIAC, SIDAC and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
We specialize in Infineon Technologies IDB30E120ATMA1 electronic components. IDB30E120ATMA1 can be shipped within 24 hours after order. If you have any demands for IDB30E120ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IDB30E120ATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IDB30E120ATMA1
Mzalishaji : Infineon Technologies
Maelezo : DIODE GEN PURP 1.2KV 50A TO263-3
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 1200V
Sasa - Wastani Aliyerekebishwa (Io) : 50A (DC)
Voltage - Mbele (Vf) (Max) @ Kama : 2.15V @ 30A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 243ns
Sasa - Rejea kuvuja @ Vr : 100µA @ 1200V
Uwezo @ Vr, F : -
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji : PG-TO263-3
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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