Nambari ya Sehemu :
FDFMA3N109
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET N-CH 30V 2.9A MICRO2X2
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2.9A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
123 mOhm @ 2.9A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
3nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
220pF @ 15V
Makala ya FET :
Schottky Diode (Isolated)
Kuondoa Nguvu (Max) :
1.5W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
6-MicroFET (2x2)
Kifurushi / Kesi :
6-VDFN Exposed Pad