Rohm Semiconductor - RFN1L6STE25

KEY Part #: K6457994

RFN1L6STE25 Bei (USD) [790810pcs Hisa]

  • 1 pcs$0.05014
  • 1,500 pcs$0.04989

Nambari ya Sehemu:
RFN1L6STE25
Mzalishaji:
Rohm Semiconductor
Maelezo ya kina:
DIODE GEN PURP 600V 800MA PMDS. Diodes - General Purpose, Power, Switching Diode Switching 600V 0.8A
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moduli, Thyristors - TRIAC, Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
Faida ya Ushindani:
We specialize in Rohm Semiconductor RFN1L6STE25 electronic components. RFN1L6STE25 can be shipped within 24 hours after order. If you have any demands for RFN1L6STE25, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RFN1L6STE25 Sifa za Bidhaa

Nambari ya Sehemu : RFN1L6STE25
Mzalishaji : Rohm Semiconductor
Maelezo : DIODE GEN PURP 600V 800MA PMDS
Mfululizo : -
Hali ya Sehemu : Not For New Designs
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Sasa - Wastani Aliyerekebishwa (Io) : 800mA
Voltage - Mbele (Vf) (Max) @ Kama : 1.45V @ 800mA
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 35ns
Sasa - Rejea kuvuja @ Vr : 1µA @ 600V
Uwezo @ Vr, F : -
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214AC, SMA
Kifurushi cha Kifaa cha Mtoaji : PMDS
Joto la Kufanya kazi - Junction : 150°C (Max)

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