Infineon Technologies - SIDC09D60E6YX1SA1

KEY Part #: K6449666

[663pcs Hisa]


    Nambari ya Sehemu:
    SIDC09D60E6YX1SA1
    Mzalishaji:
    Infineon Technologies
    Maelezo ya kina:
    DIODE GEN PURP 600V 20A WAFER.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Kusudi Maalum, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Moduli za Dereva za Nguvu and Viwango - Zener - Arrays ...
    Faida ya Ushindani:
    We specialize in Infineon Technologies SIDC09D60E6YX1SA1 electronic components. SIDC09D60E6YX1SA1 can be shipped within 24 hours after order. If you have any demands for SIDC09D60E6YX1SA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SIDC09D60E6YX1SA1 Sifa za Bidhaa

    Nambari ya Sehemu : SIDC09D60E6YX1SA1
    Mzalishaji : Infineon Technologies
    Maelezo : DIODE GEN PURP 600V 20A WAFER
    Mfululizo : -
    Hali ya Sehemu : Discontinued at Digi-Key
    Aina ya Diode : Standard
    Voltage - DC Reverse (Vr) (Max) : 600V
    Sasa - Wastani Aliyerekebishwa (Io) : 20A (DC)
    Voltage - Mbele (Vf) (Max) @ Kama : 1.7V @ 20A
    Kasi : Fast Recovery =< 500ns, > 200mA (Io)
    Rudisha Wakati wa Kuokoa (trr) : 150ns
    Sasa - Rejea kuvuja @ Vr : 27µA @ 600V
    Uwezo @ Vr, F : -
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : Die
    Kifurushi cha Kifaa cha Mtoaji : Sawn on foil
    Joto la Kufanya kazi - Junction : -55°C ~ 150°C

    Unaweza pia Kuvutiwa Na
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