Microsemi Corporation - JAN1N5809URS

KEY Part #: K6424983

JAN1N5809URS Bei (USD) [4803pcs Hisa]

  • 1 pcs$9.06350
  • 100 pcs$9.01841

Nambari ya Sehemu:
JAN1N5809URS
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
DIODE GEN PURP 100V 3A BPKG. Rectifiers Rectifier
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Thyristors - DIAC, SIDAC, Thyristors - TRIAC, Viwango - RF, Transistors - IGBTs - Arrays, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N5809URS Sifa za Bidhaa

Nambari ya Sehemu : JAN1N5809URS
Mzalishaji : Microsemi Corporation
Maelezo : DIODE GEN PURP 100V 3A BPKG
Mfululizo : Military, MIL-PRF-19500/477
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Sasa - Wastani Aliyerekebishwa (Io) : 3A
Voltage - Mbele (Vf) (Max) @ Kama : 875mV @ 4A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 30ns
Sasa - Rejea kuvuja @ Vr : 5µA @ 100V
Uwezo @ Vr, F : 60pF @ 10V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SQ-MELF, B
Kifurushi cha Kifaa cha Mtoaji : B, SQ-MELF
Joto la Kufanya kazi - Junction : -65°C ~ 175°C