Infineon Technologies - IPN95R2K0P7ATMA1

KEY Part #: K6420358

IPN95R2K0P7ATMA1 Bei (USD) [186859pcs Hisa]

  • 1 pcs$0.19794

Nambari ya Sehemu:
IPN95R2K0P7ATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 950V 4A SOT223.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Viwango - Zener - Arrays, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - Ushirikiano uliopangwa and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
We specialize in Infineon Technologies IPN95R2K0P7ATMA1 electronic components. IPN95R2K0P7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPN95R2K0P7ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPN95R2K0P7ATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPN95R2K0P7ATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 950V 4A SOT223
Mfululizo : CoolMOS™ P7
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 950V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 2 Ohm @ 1.7A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 80µA
Malango ya Lango (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 330pF @ 400V
Makala ya FET : -
Kuondoa Nguvu (Max) : 7W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-SOT223
Kifurushi / Kesi : TO-261-3

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