ON Semiconductor - HGT1S7N60A4DS

KEY Part #: K6424115

[9420pcs Hisa]


    Nambari ya Sehemu:
    HGT1S7N60A4DS
    Mzalishaji:
    ON Semiconductor
    Maelezo ya kina:
    IGBT 600V 34A 125W TO263AB.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Moja, Transistors - Kusudi Maalum, Viwango - RF, Transistors - FET, MOSFETs - Arrays and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
    Faida ya Ushindani:
    We specialize in ON Semiconductor HGT1S7N60A4DS electronic components. HGT1S7N60A4DS can be shipped within 24 hours after order. If you have any demands for HGT1S7N60A4DS, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    HGT1S7N60A4DS Sifa za Bidhaa

    Nambari ya Sehemu : HGT1S7N60A4DS
    Mzalishaji : ON Semiconductor
    Maelezo : IGBT 600V 34A 125W TO263AB
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya IGBT : -
    Voltage - Kukusanya Emitter Kuvunja (Max) : 600V
    Sasa - Mtoza (Ic) (Max) : 34A
    Sasa - Mtoza Ushuru (Icm) : 56A
    Vce (on) (Max) @ Vge, Ic : 2.7V @ 15V, 7A
    Nguvu - Max : 125W
    Kubadilisha Nishati : 55µJ (on), 60µJ (off)
    Aina ya Kuingiza : Standard
    Malango ya Lango : 37nC
    Td (on / off) @ 25 ° C : 11ns/100ns
    Hali ya Uchunguzi : 390V, 7A, 25 Ohm, 15V
    Rudisha Wakati wa Kuokoa (trr) : 34ns
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Kifurushi cha Kifaa cha Mtoaji : TO-263AB