ON Semiconductor - FQD12P10TF

KEY Part #: K6410806

[8500pcs Hisa]


    Nambari ya Sehemu:
    FQD12P10TF
    Mzalishaji:
    ON Semiconductor
    Maelezo ya kina:
    MOSFET P-CH 100V 9.4A DPAK.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Ushirikiano uliopangwa, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - TRIAC, Thyristors - SCR, Viwango - Bridge Rectifiers and Viwango - RF ...
    Faida ya Ushindani:
    We specialize in ON Semiconductor FQD12P10TF electronic components. FQD12P10TF can be shipped within 24 hours after order. If you have any demands for FQD12P10TF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQD12P10TF Sifa za Bidhaa

    Nambari ya Sehemu : FQD12P10TF
    Mzalishaji : ON Semiconductor
    Maelezo : MOSFET P-CH 100V 9.4A DPAK
    Mfululizo : QFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : P-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 100V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9.4A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 290 mOhm @ 4.7A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 27nC @ 10V
    Vgs (Max) : ±30V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 800pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 2.5W (Ta), 50W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : TO-252, (D-Pak)
    Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63