IRG7CH30K10EF Bei (USD) [67743pcs Hisa]
- 1 pcs$1.33091
- Nambari ya Sehemu:
- IRG7CH30K10EF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- IGBT CHIP WAFER.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCR, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - TRIAC, Transistors - FET, MOSFETs - Moja and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRG7CH30K10EF electronic components. IRG7CH30K10EF can be shipped within 24 hours after order. If you have any demands for IRG7CH30K10EF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRG7CH30K10EF Sifa za Bidhaa
Nambari ya Sehemu :
IRG7CH30K10EF
Mzalishaji :
Infineon Technologies
Maelezo :
IGBT CHIP WAFER
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya IGBT :
Trench
Voltage - Kukusanya Emitter Kuvunja (Max) :
1200V
Sasa - Mtoza (Ic) (Max) :
10A
Sasa - Mtoza Ushuru (Icm) :
-
Vce (on) (Max) @ Vge, Ic :
2.56V @ 15V, 10A
Nguvu - Max :
-
Kubadilisha Nishati :
-
Aina ya Kuingiza :
Standard
Malango ya Lango :
4.8nC
Td (on / off) @ 25 ° C :
10ns/90ns
Hali ya Uchunguzi :
600V, 10A, 22 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) :
-
Joto la Kufanya kazi :
-40°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
Die
Kifurushi cha Kifaa cha Mtoaji :
Die
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