IRFD9010 Bei (USD) [66291pcs Hisa]
- 1 pcs$0.59278
- 2,500 pcs$0.58983
- Nambari ya Sehemu:
- IRFD9010
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET P-CH 50V 1.1A 4-DIP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - Kusudi Maalum, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Zener - Arrays, Transistors - IGBTs - Moduli, Thyristors - TRIAC, Transistors - FET, MOSFETs - RF and Transistors - Ushirikiano uliopangwa ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix IRFD9010 electronic components. IRFD9010 can be shipped within 24 hours after order. If you have any demands for IRFD9010, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD9010 Sifa za Bidhaa
Nambari ya Sehemu :
IRFD9010
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CH 50V 1.1A 4-DIP
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
50V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.1A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
500 mOhm @ 580mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
240pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
4-DIP, Hexdip, HVMDIP
Kifurushi / Kesi :
4-DIP (0.300", 7.62mm)
Habari mpya kabisa
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