ON Semiconductor - FQI3N25TU

KEY Part #: K6410927

[13967pcs Hisa]


    Nambari ya Sehemu:
    FQI3N25TU
    Mzalishaji:
    ON Semiconductor
    Maelezo ya kina:
    MOSFET N-CH 250V 2.8A I2PAK.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Viwango - Rectifiers - Moja, Transistors - Ushirikiano uliopangwa, Transistors - JFETs, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Zener - Moja, Transistors - IGBTs - Moduli and Transistors - Bipolar (BJT) - RF ...
    Faida ya Ushindani:
    We specialize in ON Semiconductor FQI3N25TU electronic components. FQI3N25TU can be shipped within 24 hours after order. If you have any demands for FQI3N25TU, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQI3N25TU Sifa za Bidhaa

    Nambari ya Sehemu : FQI3N25TU
    Mzalishaji : ON Semiconductor
    Maelezo : MOSFET N-CH 250V 2.8A I2PAK
    Mfululizo : QFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 250V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 2.8A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 2.2 Ohm @ 1.4A, 10V
    Vgs (th) (Max) @ Id : 5V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 5.2nC @ 10V
    Vgs (Max) : ±30V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 170pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 3.13W (Ta), 45W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi cha Kifaa cha Mtoaji : I2PAK (TO-262)
    Kifurushi / Kesi : TO-262-3 Long Leads, I²Pak, TO-262AA