Nambari ya Sehemu :
FDFS2P106A
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET P-CH 60V 3A 8-SOIC
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
110 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
21nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
714pF @ 30V
Makala ya FET :
Schottky Diode (Isolated)
Kuondoa Nguvu (Max) :
900mW (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-SOIC
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)