Everlight Electronics Co Ltd - PT15-21B/TR8

KEY Part #: K7359526

PT15-21B/TR8 Bei (USD) [1558689pcs Hisa]

  • 1 pcs$0.02385
  • 2,000 pcs$0.02373
  • 6,000 pcs$0.02136
  • 10,000 pcs$0.01898
  • 50,000 pcs$0.01602
  • 100,000 pcs$0.01542

Nambari ya Sehemu:
PT15-21B/TR8
Mzalishaji:
Everlight Electronics Co Ltd
Maelezo ya kina:
PHOTOTRANSISTOR FLAT TOP BK 1206.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Transceiver za IrDA, Sensorer za Motion - Gyroscopes, Sensorer za joto - Analog na Pato la dijiti, Unyevu, Sensorer za unyevu, Cable ya Sensor - Assemblies, Sensorer ya Magnetic - Compass, shamba ya Magnetic, Sensorer ya macho - Picha za kupotosha - Aina ya S and Magneti - Kusudi Mbadala ...
Faida ya Ushindani:
We specialize in Everlight Electronics Co Ltd PT15-21B/TR8 electronic components. PT15-21B/TR8 can be shipped within 24 hours after order. If you have any demands for PT15-21B/TR8, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PT15-21B/TR8 Sifa za Bidhaa

Nambari ya Sehemu : PT15-21B/TR8
Mzalishaji : Everlight Electronics Co Ltd
Maelezo : PHOTOTRANSISTOR FLAT TOP BK 1206
Mfululizo : -
Hali ya Sehemu : Active
Voltage - Kukusanya Emitter Kuvunja (Max) : 30V
Sasa - Mtoza (Ic) (Max) : 20mA
Sasa - Giza (Id) (Max) : 100nA
Wavelength : 940nm
Kuangalia Angle : -
Nguvu - Max : 75mW
Aina ya Kuinua : Surface Mount
Mazoezi : Top View
Joto la Kufanya kazi : -25°C ~ 85°C (TA)
Kifurushi / Kesi : 1206 (3216 Metric)
Unaweza pia Kuvutiwa Na
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.