ON Semiconductor - RFD12N06RLESM9A

KEY Part #: K6403222

RFD12N06RLESM9A Bei (USD) [229337pcs Hisa]

  • 1 pcs$0.16209
  • 2,500 pcs$0.16128

Nambari ya Sehemu:
RFD12N06RLESM9A
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 60V 18A DPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Transistors - Kusudi Maalum, Transistors - IGBTs - Moja, Transistors - IGBTs - Moduli, Transistors - JFETs, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Moja and Transistors - FET, MOSFETs - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RFD12N06RLESM9A Sifa za Bidhaa

Nambari ya Sehemu : RFD12N06RLESM9A
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 60V 18A DPAK
Mfululizo : UltraFET™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 18A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 63 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±16V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 485pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 49W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-252AA
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63