DMN2600UFB-7 Bei (USD) [1317573pcs Hisa]
- 1 pcs$0.02807
- 3,000 pcs$0.02602
- Nambari ya Sehemu:
- DMN2600UFB-7
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N-CH 25V 1.3A DFN1006-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - JFETs, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - RF, Viwango - Zener - Moja, Transistors - FET, MOSFETs - RF and Transistors - IGBTs - Moduli ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN2600UFB-7 electronic components. DMN2600UFB-7 can be shipped within 24 hours after order. If you have any demands for DMN2600UFB-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2600UFB-7 Sifa za Bidhaa
Nambari ya Sehemu :
DMN2600UFB-7
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N-CH 25V 1.3A DFN1006-3
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
25V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.3A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.8V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
350 mOhm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
0.85nC @ 4.5V
Vgs (Max) :
±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
70.13pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
540mW (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
3-DFN1006 (1.0x0.6)
Kifurushi / Kesi :
3-UFDFN
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