Infineon Technologies - IGB10N60TATMA1

KEY Part #: K6423172

IGB10N60TATMA1 Bei (USD) [116645pcs Hisa]

  • 1 pcs$0.31709
  • 1,000 pcs$0.29096
  • 2,000 pcs$0.27157
  • 5,000 pcs$0.25863

Nambari ya Sehemu:
IGB10N60TATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
IGBT 600V 20A 110W TO263-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Transistors - FET, MOSFETs - RF, Transistors - JFETs, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Moduli, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika and Viwango - RF ...
Faida ya Ushindani:
We specialize in Infineon Technologies IGB10N60TATMA1 electronic components. IGB10N60TATMA1 can be shipped within 24 hours after order. If you have any demands for IGB10N60TATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IGB10N60TATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IGB10N60TATMA1
Mzalishaji : Infineon Technologies
Maelezo : IGBT 600V 20A 110W TO263-3
Mfululizo : TrenchStop®
Hali ya Sehemu : Active
Aina ya IGBT : NPT, Trench Field Stop
Voltage - Kukusanya Emitter Kuvunja (Max) : 600V
Sasa - Mtoza (Ic) (Max) : 20A
Sasa - Mtoza Ushuru (Icm) : 30A
Vce (on) (Max) @ Vge, Ic : 2.05V @ 15V, 10A
Nguvu - Max : 110W
Kubadilisha Nishati : 430µJ
Aina ya Kuingiza : Standard
Malango ya Lango : 62nC
Td (on / off) @ 25 ° C : 12ns/215ns
Hali ya Uchunguzi : 400V, 10A, 23 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : -
Joto la Kufanya kazi : -40°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji : PG-TO263-3-2