Vishay Siliconix - IRFB9N30A

KEY Part #: K6414094

[12873pcs Hisa]


    Nambari ya Sehemu:
    IRFB9N30A
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET N-CH 300V 9.3A TO-220AB.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Moja, Viwango - Bridge Rectifiers, Transistors - JFETs, Viwango - RF and Transistors - Kusudi Maalum ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix IRFB9N30A electronic components. IRFB9N30A can be shipped within 24 hours after order. If you have any demands for IRFB9N30A, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFB9N30A Sifa za Bidhaa

    Nambari ya Sehemu : IRFB9N30A
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET N-CH 300V 9.3A TO-220AB
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 300V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9.3A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 450 mOhm @ 5.6A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 33nC @ 10V
    Vgs (Max) : ±30V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 920pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 96W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi cha Kifaa cha Mtoaji : TO-220AB
    Kifurushi / Kesi : TO-220-3

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