Infineon Technologies - IGD01N120H2BUMA1

KEY Part #: K6424954

IGD01N120H2BUMA1 Bei (USD) [151151pcs Hisa]

  • 1 pcs$0.24470
  • 2,500 pcs$0.21075

Nambari ya Sehemu:
IGD01N120H2BUMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
IGBT 1200V 3.2A 28W TO252-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - Kufika, Transistors - Ushirikiano uliopangwa, Viwango - Zener - Moja and Viwango - RF ...
Faida ya Ushindani:
We specialize in Infineon Technologies IGD01N120H2BUMA1 electronic components. IGD01N120H2BUMA1 can be shipped within 24 hours after order. If you have any demands for IGD01N120H2BUMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IGD01N120H2BUMA1 Sifa za Bidhaa

Nambari ya Sehemu : IGD01N120H2BUMA1
Mzalishaji : Infineon Technologies
Maelezo : IGBT 1200V 3.2A 28W TO252-3
Mfululizo : -
Hali ya Sehemu : Not For New Designs
Aina ya IGBT : -
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : 3.2A
Sasa - Mtoza Ushuru (Icm) : 3.5A
Vce (on) (Max) @ Vge, Ic : 2.8V @ 15V, 1A
Nguvu - Max : 28W
Kubadilisha Nishati : 140µJ
Aina ya Kuingiza : Standard
Malango ya Lango : 8.6nC
Td (on / off) @ 25 ° C : 13ns/370ns
Hali ya Uchunguzi : 800V, 1A, 241 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : -
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Mtoaji : PG-TO252-3