ON Semiconductor - HGTP10N120BN

KEY Part #: K6424877

HGTP10N120BN Bei (USD) [52422pcs Hisa]

  • 1 pcs$0.74960
  • 800 pcs$0.74587

Nambari ya Sehemu:
HGTP10N120BN
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
IGBT 1200V 35A 298W TO220AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Viwango - Bridge Rectifiers, Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Moja, Viwango - RF, Thyristors - SCR, Transistors - IGBTs - Arrays and Transistors - Bipolar (BJT) - Kufika ...
Faida ya Ushindani:
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HGTP10N120BN Sifa za Bidhaa

Nambari ya Sehemu : HGTP10N120BN
Mzalishaji : ON Semiconductor
Maelezo : IGBT 1200V 35A 298W TO220AB
Mfululizo : -
Hali ya Sehemu : Not For New Designs
Aina ya IGBT : NPT
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : 35A
Sasa - Mtoza Ushuru (Icm) : 80A
Vce (on) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
Nguvu - Max : 298W
Kubadilisha Nishati : 320µJ (on), 800µJ (off)
Aina ya Kuingiza : Standard
Malango ya Lango : 100nC
Td (on / off) @ 25 ° C : 23ns/165ns
Hali ya Uchunguzi : 960V, 10A, 10 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : -
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-220-3
Kifurushi cha Kifaa cha Mtoaji : TO-220-3