[3237pcs Hisa]
- Nambari ya Sehemu:
- IXTM11N80
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- POWER MOSFET TO-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Moja, Viwango - Bridge Rectifiers and Transistors - IGBTs - Moduli ...
- Faida ya Ushindani:
- We specialize in IXYS IXTM11N80 electronic components. IXTM11N80 can be shipped within 24 hours after order. If you have any demands for IXTM11N80, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTM11N80 Sifa za Bidhaa
Nambari ya Sehemu :
IXTM11N80
Mzalishaji :
IXYS
Maelezo :
POWER MOSFET TO-3
Mfululizo :
GigaMOS™
Hali ya Sehemu :
Last Time Buy
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
11A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
950 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
170nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
4500pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
300W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-204AA
Kifurushi / Kesi :
TO-204AA, TO-3
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