Diodes Incorporated - DMN2023UCB4-7

KEY Part #: K6521974

DMN2023UCB4-7 Bei (USD) [333981pcs Hisa]

  • 1 pcs$0.11075

Nambari ya Sehemu:
DMN2023UCB4-7
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET 2N-CH X1-WLB1818-4.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCR, Viwango - Bridge Rectifiers, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Moduli, Transistors - IGBTs - Moja and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMN2023UCB4-7 electronic components. DMN2023UCB4-7 can be shipped within 24 hours after order. If you have any demands for DMN2023UCB4-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2023UCB4-7 Sifa za Bidhaa

Nambari ya Sehemu : DMN2023UCB4-7
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET 2N-CH X1-WLB1818-4
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual) Common Drain
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 24V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6A (Ta)
Njia ya Kutumia (Max) @ Id, Vgs : -
Vgs (th) (Max) @ Id : 1.3V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 37nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 3333pF @ 10V
Nguvu - Max : 1.45W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 4-XFBGA, WLBGA
Kifurushi cha Kifaa cha Mtoaji : X1-WLB1818-4

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