SIHG100N60E-GE3 Bei (USD) [12880pcs Hisa]
- 1 pcs$3.19948
- Nambari ya Sehemu:
- SIHG100N60E-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET E SERIES 600V TO247AC.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - Arrays, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika and Transistors - JFETs ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIHG100N60E-GE3 electronic components. SIHG100N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHG100N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHG100N60E-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIHG100N60E-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET E SERIES 600V TO247AC
Mfululizo :
E
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
30A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
100 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1851pF @ 100V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
208W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-247AC
Kifurushi / Kesi :
TO-247-3
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