FQA13N80-F109 Bei (USD) [15181pcs Hisa]
- 1 pcs$2.71471
- Nambari ya Sehemu:
- FQA13N80-F109
- Mzalishaji:
- ON Semiconductor
- Maelezo ya kina:
- MOSFET N-CH 800V 12.6A TO-3P.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - RF, Viwango - Bridge Rectifiers, Viwango - Zener - Arrays, Transistors - Ushirikiano uliopangwa, Transistors - Kusudi Maalum and Transistors - FET, MOSFETs - RF ...
- Faida ya Ushindani:
- We specialize in ON Semiconductor FQA13N80-F109 electronic components. FQA13N80-F109 can be shipped within 24 hours after order. If you have any demands for FQA13N80-F109, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQA13N80-F109 Sifa za Bidhaa
Nambari ya Sehemu :
FQA13N80-F109
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET N-CH 800V 12.6A TO-3P
Mfululizo :
QFET®
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
12.6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
750 mOhm @ 6.3A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
88nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
3500pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
300W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-3PN
Kifurushi / Kesi :
TO-3P-3, SC-65-3
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