IXYS - IXTQ182N055T

KEY Part #: K6408757

[516pcs Hisa]


    Nambari ya Sehemu:
    IXTQ182N055T
    Mzalishaji:
    IXYS
    Maelezo ya kina:
    MOSFET N-CH 55V 182A TO-3P.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - Kusudi Maalum, Thyristors - SCR, Transistors - IGBTs - Moja, Transistors - JFETs, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Viwango - Rectifiers - Moja ...
    Faida ya Ushindani:
    We specialize in IXYS IXTQ182N055T electronic components. IXTQ182N055T can be shipped within 24 hours after order. If you have any demands for IXTQ182N055T, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXTQ182N055T Sifa za Bidhaa

    Nambari ya Sehemu : IXTQ182N055T
    Mzalishaji : IXYS
    Maelezo : MOSFET N-CH 55V 182A TO-3P
    Mfululizo : TrenchMV™
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 55V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 182A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 5 mOhm @ 25A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 114nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 4850pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 360W (Tc)
    Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi cha Kifaa cha Mtoaji : TO-3P
    Kifurushi / Kesi : TO-3P-3, SC-65-3