EPC - EPC2012

KEY Part #: K6406610

EPC2012 Bei (USD) [1259pcs Hisa]

  • 1,000 pcs$0.56684

Nambari ya Sehemu:
EPC2012
Mzalishaji:
EPC
Maelezo ya kina:
GANFET TRANS 200V 3A BUMPED DIE.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - IGBTs - Arrays, Viwango - Rectifiers - Moja, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - Moja and Viwango - Rectifiers - Arrays ...
Faida ya Ushindani:
We specialize in EPC EPC2012 electronic components. EPC2012 can be shipped within 24 hours after order. If you have any demands for EPC2012, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2012 Sifa za Bidhaa

Nambari ya Sehemu : EPC2012
Mzalishaji : EPC
Maelezo : GANFET TRANS 200V 3A BUMPED DIE
Mfululizo : eGaN®
Hali ya Sehemu : Discontinued at Digi-Key
Aina ya FET : N-Channel
Teknolojia : GaNFET (Gallium Nitride)
Kukata kwa Voltage Voltage (Vdss) : 200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 5V
Njia ya Kutumia (Max) @ Id, Vgs : 100 mOhm @ 3A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 1.8nC @ 5V
Vgs (Max) : +6V, -5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 145pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : -
Joto la Kufanya kazi : -40°C ~ 125°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : Die
Kifurushi / Kesi : Die