Microsemi Corporation - APTM100A13DG

KEY Part #: K6522573

APTM100A13DG Bei (USD) [590pcs Hisa]

  • 1 pcs$78.99321
  • 100 pcs$78.60021

Nambari ya Sehemu:
APTM100A13DG
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
MOSFET 2N-CH 1000V 65A SP6.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - RF, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - Kusudi Maalum, Thyristors - SCRs - Moduli and Viwango - Rectifiers - Arrays ...
Faida ya Ushindani:
We specialize in Microsemi Corporation APTM100A13DG electronic components. APTM100A13DG can be shipped within 24 hours after order. If you have any demands for APTM100A13DG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM100A13DG Sifa za Bidhaa

Nambari ya Sehemu : APTM100A13DG
Mzalishaji : Microsemi Corporation
Maelezo : MOSFET 2N-CH 1000V 65A SP6
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Half Bridge)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 1000V (1kV)
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 65A
Njia ya Kutumia (Max) @ Id, Vgs : 156 mOhm @ 32.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 6mA
Malango ya Lango (Qg) (Max) @ Vgs : 562nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 15200pF @ 25V
Nguvu - Max : 1250W
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Chassis Mount
Kifurushi / Kesi : SP6
Kifurushi cha Kifaa cha Mtoaji : SP6