Infineon Technologies - IPB036N12N3GATMA1

KEY Part #: K6417072

IPB036N12N3GATMA1 Bei (USD) [24475pcs Hisa]

  • 1 pcs$1.68394

Nambari ya Sehemu:
IPB036N12N3GATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 120V 180A TO263-7.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Transistors - IGBTs - Moja, Transistors - IGBTs - Arrays, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - RF, Transistors - Ushirikiano uliopangwa, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Thyristors - SCR ...
Faida ya Ushindani:
We specialize in Infineon Technologies IPB036N12N3GATMA1 electronic components. IPB036N12N3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPB036N12N3GATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB036N12N3GATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPB036N12N3GATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 120V 180A TO263-7
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 120V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 180A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 3.6 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 270µA
Malango ya Lango (Qg) (Max) @ Vgs : 211nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 13800pF @ 60V
Makala ya FET : -
Kuondoa Nguvu (Max) : 300W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TO263-7
Kifurushi / Kesi : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

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