Nambari ya Sehemu :
TPC8110(TE12L,Q,M)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET P-CH 40V 8A SOP8 2-6J1B
Hali ya Sehemu :
Obsolete
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
8A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
25 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
2V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
48nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2180pF @ 10V
Kuondoa Nguvu (Max) :
1W (Ta)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-SOP (5.5x6.0)
Kifurushi / Kesi :
8-SOIC (0.173", 4.40mm Width)