Vishay Siliconix - SIA918EDJ-T1-GE3

KEY Part #: K6525480

SIA918EDJ-T1-GE3 Bei (USD) [498195pcs Hisa]

  • 1 pcs$0.07424
  • 3,000 pcs$0.07013

Nambari ya Sehemu:
SIA918EDJ-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET 2N-CH 30V POWERPAK SC70-6.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Viwango - Zener - Arrays, Transistors - FET, MOSFETs - RF, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Thyristors - SCRs - Moduli and Viwango - Bridge Rectifiers ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIA918EDJ-T1-GE3 electronic components. SIA918EDJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA918EDJ-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIA918EDJ-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SIA918EDJ-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET 2N-CH 30V POWERPAK SC70-6
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4.5A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs : 58 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id : 900mV @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 5.5nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : -
Nguvu - Max : 7.8W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : PowerPAK® SC-70-6 Dual
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® SC-70-6 Dual

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