Nambari ya Sehemu :
FDD3510H
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET N/P-CH 80V 4.3A/2.8A DPAK
Aina ya FET :
N and P-Channel, Common Drain
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
80V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4.3A, 2.8A
Njia ya Kutumia (Max) @ Id, Vgs :
80 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
18nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
800pF @ 40V
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Kifurushi cha Kifaa cha Mtoaji :
TO-252-4L