Vishay Siliconix - SI4916DY-T1-E3

KEY Part #: K6524423

SI4916DY-T1-E3 Bei (USD) [3836pcs Hisa]

  • 2,500 pcs$0.18211

Nambari ya Sehemu:
SI4916DY-T1-E3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET 2N-CH 30V 10A 8-SOIC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Bridge Rectifiers, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Moja, Viwango - Zener - Moja and Moduli za Dereva za Nguvu ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI4916DY-T1-E3 electronic components. SI4916DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4916DY-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4916DY-T1-E3 Sifa za Bidhaa

Nambari ya Sehemu : SI4916DY-T1-E3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET 2N-CH 30V 10A 8-SOIC
Mfululizo : LITTLE FOOT®
Hali ya Sehemu : Obsolete
Aina ya FET : 2 N-Channel (Half Bridge)
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 10A, 10.5A
Njia ya Kutumia (Max) @ Id, Vgs : 18 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 10nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : -
Nguvu - Max : 3.3W, 3.5W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji : 8-SO